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HfTe2 is a promising material with a rich set of physical properties that could play a significant role in the development of next-generation electronic and spintronic devices
such as photodetectors and solar cells
we recommend annealing the device post-transfer to minimize contact resistance
and quantum sensors
please let us know your specifications
Cr2Ge2Te6（CHROMIUM GERMANIUM TELLURIDE） HfTe2 is a promising materialCr2Ge2Te6 is a ferromagnetic semiconductor. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Cr2Ge2Te6 is a trichalcogenide. Each product will include 3 pieces of samples, approximately 3 to 4 mm in size. If you have any specific requirements or questions, please let us know! CrGeTe (chromium germanium telluride) is a layered transition metal chalcogenide that has garnered interest due to its
US$ 14500.00
US$ 20412.50
US$ 27600.00
